Memory Circuit Design Engineer

About us:
Faraday Technology Corporation is a leading fabless ASIC design and silicon IP (Intellectual property) provider established in 1993 as the first Asian ASIC vendor. Faraday is listed on the Taiwan Stock Exchange (TWSE) under ticket number 3035.
Faraday Technology Vietnam (FTV) is established in Ho Chi Minh in 2019. We aim to be a full-fledged R&D centre, spanning from RTL design to post-sillicon verification.
About the Role:
We are seeking a motivated Memory Circuit Engineer to join our Memory Development team. This role offers a structured opportunity to learn commercial embedded memory IP design flows (SRAM, ROM) through direct mentorship from senior engineers. You will support critical stages of the memory development lifecycle, including circuit design, simulation, layout collaboration, and flow automation.
Responsibilities:
On-the-Job Training: Receive direct mentorship from senior engineers to learn commercial embedded memory IP design flows (SRAM, ROM).
Design & Simulation Assistance:
Support building and checking transistor-level schematics for memory functional blocks.
Run SPICE/HSPICE simulations to analyze timing, power, noise margin, and power consumption across various PVT (Process, Voltage, Temperature) corners.
Layout Team Collaboration: Learn physical design rules, perform layout checks (DRC/LVS), and run Parasitic Extraction (PEX) for post-layout simulations.
Flow Automation: Assist in writing automation coding to streamline simulation execution and data post-processing.
Qualifications
Education & Background:
Bachelor's or Master's degree in Electrical/Electronics Engineering, Computer Engineering, Semiconductor/VLSI Design, Engineering Physics, or closely related fields.
Academic Standing (GPA): Recommended 7.5/10 (or 3.0/4.0) or above.
Core Technical Knowledge:
Foundational Knowledge: Solid understanding of CMOS circuit theory, semiconductor device physics (MOSFET characterization), Electronic Circuits, Digital IC design.
Memory Architecture: Basic understanding of SRAM memory cell operations (6T bitcell, bitline/wordline, sense amplifier, decoder, write driver).
EDA Tools Experience: Prior hands-on experience during coursework or projects with IC design tools such as HSPICE, Cadence Virtuoso, Synopsys Custom Compiler, or LTspice/Cadence Spectre.
Coding: Fundamental capabilities in Python, TCL, C/C++, or Linux Shell scripting for automation.
Languages & Soft Skills:
English: Proficient in reading technical documentation and basic verbal/written communication for global reporting systems.
Mindset: Strong passion for working at the transistor level, attention to detail, and analytical circuit problem-solving skills.
Why Join Faraday Technology?
Opportunity to work on cutting-edge ASIC and memory technologies.
A collaborative environment that encourages innovation and continuous learning.
Exposure to global projects and cross-cultural teamwork.
Competitive compensation and comprehensive benefits package.
Faraday Technology is an equal opportunity employer. We celebrate diversity and are committed to creating an inclusive environment for all employees.